All MOSFET. NDC632P Datasheet

 

NDC632P Datasheet and Replacement


   Type Designator: NDC632P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SUPERSOT6
 

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NDC632P Datasheet (PDF)

 ..1. Size:80K  fairchild semi
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NDC632P

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5Vpower field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is Propriet

Datasheet: NDB7052L , NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , IRF640N , NDC651N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P .

History: 2N7002DW1T1

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