NDC632P Datasheet. Specs and Replacement

Type Designator: NDC632P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SUPERSOT6

  📄📄 Copy 

NDC632P substitution

- MOSFET ⓘ Cross-Reference Search

 

NDC632P datasheet

 ..1. Size:80K  fairchild semi
 ndc632p.pdf pdf_icon

NDC632P

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode -2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5V power field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V. Fairchild's proprietary, high cell density, DMOS technology. This very high density process is Propriet... See More ⇒

Detailed specifications: NDB7052L, NDB7060, NDB7060L, NDB7061, NDB7061L, NDB708A, NDB710A, NDC631N, 2N7002, NDC651N, NDC652P, NDC7002N, NDC7003P, NDH8301N, NDH8302P, NDH8303N, NDH8304P

Keywords - NDC632P MOSFET specs

 NDC632P cross reference

 NDC632P equivalent finder

 NDC632P pdf lookup

 NDC632P substitution

 NDC632P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs