NDC632P PDF and Equivalents Search

 

NDC632P Specs and Replacement


   Type Designator: NDC632P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SUPERSOT6
 

 NDC632P substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDC632P datasheet

 ..1. Size:80K  fairchild semi
 ndc632p.pdf pdf_icon

NDC632P

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode -2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5V power field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V. Fairchild's proprietary, high cell density, DMOS technology. This very high density process is Propriet... See More ⇒

Detailed specifications: NDB7052L , NDB7060 , NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , IRFB4110 , NDC651N , NDC652P , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P .

Keywords - NDC632P MOSFET specs

 NDC632P cross reference
 NDC632P equivalent finder
 NDC632P pdf lookup
 NDC632P substitution
 NDC632P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.