BUZ360 Specs and Replacement

Type Designator: BUZ360

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-218AA

BUZ360 substitution

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BUZ360 datasheet

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 buz360.pdf pdf_icon

BUZ360

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 9.1. Size:176K  siemens
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BUZ360

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 9.2. Size:223K  inchange semiconductor
 buz36.pdf pdf_icon

BUZ360

isc N-Channel Mosfet Transistor BUZ36 FEATURES Static Drain-Source On-Resistance R = 0.12 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo... See More ⇒

Detailed specifications: BUZ348, BUZ349, BUZ350, BUZ351, BUZ355, BUZ356, BUZ357, BUZ358, 12N60, BUZ37, BUZ381, BUZ383, BUZ385, BUZ40B, BUZ44A, BUZ45B, BUZ51

Keywords - BUZ360 MOSFET specs

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