BUZ360 Datasheet and Replacement
Type Designator: BUZ360
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-218AA
BUZ360 substitution
BUZ360 Datasheet (PDF)
buz36.pdf

isc N-Channel Mosfet Transistor BUZ36FEATURESStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo
Datasheet: BUZ348 , BUZ349 , BUZ350 , BUZ351 , BUZ355 , BUZ356 , BUZ357 , BUZ358 , 4N60 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , BUZ51 .
History: BUZ339 | IPU50R3K0CE | AOH3110 | TPCC8074 | SRC60R420 | BST72A | STF8209
Keywords - BUZ360 MOSFET datasheet
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History: BUZ339 | IPU50R3K0CE | AOH3110 | TPCC8074 | SRC60R420 | BST72A | STF8209



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