All MOSFET. BUZ360 Datasheet

 

BUZ360 Datasheet and Replacement


   Type Designator: BUZ360
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-218AA
 

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BUZ360 Datasheet (PDF)

 ..1. Size:180K  siemens
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BUZ360

 9.1. Size:176K  siemens
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BUZ360

 9.2. Size:223K  inchange semiconductor
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BUZ360

isc N-Channel Mosfet Transistor BUZ36FEATURESStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

Datasheet: BUZ348 , BUZ349 , BUZ350 , BUZ351 , BUZ355 , BUZ356 , BUZ357 , BUZ358 , 4N60 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , BUZ51 .

History: ISCNH060D | FDD86113LZ

Keywords - BUZ360 MOSFET datasheet

 BUZ360 cross reference
 BUZ360 equivalent finder
 BUZ360 lookup
 BUZ360 substitution
 BUZ360 replacement

 

 
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