BUZ383 Datasheet and Replacement
Type Designator: BUZ383
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-218AA
BUZ383 substitution
BUZ383 Datasheet (PDF)
buz384.pdf

BUZ 384SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 384 500 V 10.5 A 0.6 TO-218 AA C67078-A3209-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 25 C 10.5Pulsed drain
buz380.pdf

BUZ 380SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 380 1000 V 5.5 A 2 TO-218 AA C67078-A3205-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 30 C 5.5Pulsed drain
Datasheet: BUZ351 , BUZ355 , BUZ356 , BUZ357 , BUZ358 , BUZ360 , BUZ37 , BUZ381 , IRF1407 , BUZ385 , BUZ40B , BUZ44A , BUZ45B , BUZ51 , BUZ53A , BUZ53C , BUZ54 .
History: MS65R400RF | J109 | AM1340N | STW56N65DM2 | J110 | IRCZ24PBF | SM6F24NSU
Keywords - BUZ383 MOSFET datasheet
BUZ383 cross reference
BUZ383 equivalent finder
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History: MS65R400RF | J109 | AM1340N | STW56N65DM2 | J110 | IRCZ24PBF | SM6F24NSU



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