BUZ385 Datasheet and Replacement
Type Designator: BUZ385
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-218AA
BUZ385 substitution
BUZ385 Datasheet (PDF)
buz384.pdf

BUZ 384SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 384 500 V 10.5 A 0.6 TO-218 AA C67078-A3209-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 25 C 10.5Pulsed drain
buz380.pdf

BUZ 380SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 380 1000 V 5.5 A 2 TO-218 AA C67078-A3205-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 1000 VVDGRDrain-gate voltageRGS = 20 k 1000Continuous drain current ID ATC = 30 C 5.5Pulsed drain
Datasheet: BUZ355 , BUZ356 , BUZ357 , BUZ358 , BUZ360 , BUZ37 , BUZ381 , BUZ383 , IRLZ44N , BUZ40B , BUZ44A , BUZ45B , BUZ51 , BUZ53A , BUZ53C , BUZ54 , BUZ54A .
History: WML53N60C4
Keywords - BUZ385 MOSFET datasheet
BUZ385 cross reference
BUZ385 equivalent finder
BUZ385 lookup
BUZ385 substitution
BUZ385 replacement
History: WML53N60C4



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