NDC652P Specs and Replacement
Type Designator: NDC652P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SUPERSOT6
NDC652P substitution
NDC652P datasheet
ndc651n.pdf
March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V. high cell density, DMOS technology. This very high density process is tailored t... See More ⇒
Detailed specifications: NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , NDC651N , IRFP260N , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P , NDH831N , NDH832P .
Keywords - NDC652P MOSFET specs
NDC652P cross reference
NDC652P equivalent finder
NDC652P pdf lookup
NDC652P substitution
NDC652P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
LIST
Last Update
MOSFET: APP540 | APP50N06 | APG250N01Q | APG095N01K | APG095N01 | APG082N01 | APG080N12 | APG078N07K | APG078N07 | APG070N12G
Popular searches
tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568