All MOSFET. NDC652P Datasheet

 

NDC652P Datasheet and Replacement


   Type Designator: NDC652P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SUPERSOT6
 

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NDC652P Datasheet (PDF)

 9.1. Size:71K  fairchild semi
 ndc651n.pdf pdf_icon

NDC652P

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t

Datasheet: NDB7060L , NDB7061 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , NDC651N , 10N60 , NDC7002N , NDC7003P , NDH8301N , NDH8302P , NDH8303N , NDH8304P , NDH831N , NDH832P .

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