NDC652P Datasheet. Specs and Replacement

Type Designator: NDC652P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SUPERSOT6

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NDC652P datasheet

 9.1. Size:71K  fairchild semi
 ndc651n.pdf pdf_icon

NDC652P

March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V. high cell density, DMOS technology. This very high density process is tailored t... See More ⇒

Detailed specifications: NDB7060L, NDB7061, NDB7061L, NDB708A, NDB710A, NDC631N, NDC632P, NDC651N, IRFZ44, NDC7002N, NDC7003P, NDH8301N, NDH8302P, NDH8303N, NDH8304P, NDH831N, NDH832P

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