All MOSFET. BUZ40B Datasheet

 

BUZ40B Datasheet and Replacement


   Type Designator: BUZ40B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB
 

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BUZ40B Datasheet (PDF)

 ..1. Size:161K  siemens
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BUZ40B

BUZ 40 BSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 40 B 500 V 8.5 A 0.8 TO-220 AB C67078-S1305-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 8.5Pulsed drain current IDpulsTC = 25 C 34Avalanche current,limited by Tjmax

 ..2. Size:229K  inchange semiconductor
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BUZ40B

isc N-Channel Mosfet Transistor BUZ40BFEATURESSOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer CharacteristicsHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,relay drivers and d

Datasheet: BUZ356 , BUZ357 , BUZ358 , BUZ360 , BUZ37 , BUZ381 , BUZ383 , BUZ385 , STP80NF70 , BUZ44A , BUZ45B , BUZ51 , BUZ53A , BUZ53C , BUZ54 , BUZ54A , BUZ61 .

History: FKV660S | IRC830PBF | AP2612GY-HF

Keywords - BUZ40B MOSFET datasheet

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