BWS2301 Datasheet and Replacement
Type Designator: BWS2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 2.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT-23
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BWS2301 Datasheet (PDF)
bws2301.pdf

Bruckewell Technology Corp., Ltd. P-Channel Enhancement-Mode MOSFETs BWS2301 MECHANICAL DATA * Case: SOT-23 Molded plastic * Epoxy: UL94V-O rate flame retardant Dimensions in millimeter Maximum Ratings (Tc=25C unless otherwise noted) Parameter Symbol BWS2301 Unit Drain-Source Voltage BVDSS -20 V Gate- Source Voltage VGS +/-8 V Drain Current (continuous) ID -2.3 A Dr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT
Keywords - BWS2301 MOSFET datasheet
BWS2301 cross reference
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History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT



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