C2M0080120D Specs and Replacement
Type Designator: C2M0080120D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 31.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO-247-3
C2M0080120D substitution
C2M0080120D datasheet
c2m0080120d.pdf
VDS 1200 V ID @ 25 C 31.6 A C2M0080120D RDS(on) 80 m Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benef... See More ⇒
Detailed specifications: BUZ93 , BVSS123L , BVSS138L , BVSS84L , BW3402 , BWS2301 , BXL4004 , BXL4004-1E , IRFZ46N , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 .
Keywords - C2M0080120D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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