C2M0080120D MOSFET. Datasheet pdf. Equivalent
Type Designator: C2M0080120D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.2 V
Maximum Drain Current |Id|: 31.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 49.2 nC
Rise Time (tr): 13.6 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 0.098 Ohm
Package: TO-247-3
C2M0080120D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C2M0080120D Datasheet (PDF)
1.1. c2m0080120d.pdf 
Size:727K _update_mosfet
VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D RDS(on) 80 mΩ Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant TO-247-3 Benef
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
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