All MOSFET. C2M0080120D Datasheet

 

C2M0080120D Datasheet and Replacement


   Type Designator: C2M0080120D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 31.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO-247-3
 

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C2M0080120D Datasheet (PDF)

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C2M0080120D

VDS 1200 VID @ 25C 31.6 AC2M0080120D RDS(on) 80 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantTO-247-3 Benef

Datasheet: BUZ93 , BVSS123L , BVSS138L , BVSS84L , BW3402 , BWS2301 , BXL4004 , BXL4004-1E , STP65NF06 , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 .

History: 2N65KL-TMS4-T

Keywords - C2M0080120D MOSFET datasheet

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