C2M0080120D PDF and Equivalents Search

 

C2M0080120D Specs and Replacement

Type Designator: C2M0080120D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 31.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.6 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm

Package: TO-247-3

C2M0080120D substitution

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C2M0080120D datasheet

 ..1. Size:727K  cree
 c2m0080120d.pdf pdf_icon

C2M0080120D

VDS 1200 V ID @ 25 C 31.6 A C2M0080120D RDS(on) 80 m Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benef... See More ⇒

Detailed specifications: BUZ93 , BVSS123L , BVSS138L , BVSS84L , BW3402 , BWS2301 , BXL4004 , BXL4004-1E , IRFZ46N , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 .

History: ZXMP6A13FQ | BSC050NE2LS | TK7P50D

Keywords - C2M0080120D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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