C2M1000170D Specs and Replacement

Type Designator: C2M1000170D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-247-3

C2M1000170D substitution

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C2M1000170D datasheet

 ..1. Size:622K  cree
 c2m1000170d.pdf pdf_icon

C2M1000170D

VDS 1700 V ID @ 25 C 4.9 A C2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Effi... See More ⇒

 4.1. Size:1101K  cree
 c2m1000170j.pdf pdf_icon

C2M1000170D

VDS 1700 V ID @ 25 C 5.3 A C2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package TAB High blocking voltage with low RDS(on) Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli... See More ⇒

Detailed specifications: BVSS138L, BVSS84L, BW3402, BWS2301, BXL4004, BXL4004-1E, C2M0080120D, C2M0160120D, IRLB3034, CAS100H12AM1, CCS050M12CM2, CCS5Y3315CM, CDM22010-650, CDM4-650, CDM7-650, CHM003TGP, CHM02N6ANGP

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