All MOSFET. CAS100H12AM1 Datasheet

 

CAS100H12AM1 Datasheet and Replacement


   Type Designator: CAS100H12AM1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MODULE
 

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CAS100H12AM1 Datasheet (PDF)

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CAS100H12AM1

CAS100H12AM1VDS 1.2 kV1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25C) 16 mHalf-Bridge ModuleEOFF (TJ = 125C) 1.8 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base

Datasheet: BVSS84L , BW3402 , BWS2301 , BXL4004 , BXL4004-1E , C2M0080120D , C2M0160120D , C2M1000170D , AON7403 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 , CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP .

History: SQJA60EP

Keywords - CAS100H12AM1 MOSFET datasheet

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