CAS100H12AM1 Specs and Replacement

Type Designator: CAS100H12AM1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 568 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 168 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 970 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: MODULE

CAS100H12AM1 substitution

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CAS100H12AM1 datasheet

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CAS100H12AM1

CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25 C) 16 m Half-Bridge Module EOFF (TJ = 125 C) 1.8 mJ Z-FETTM MOSFET and Z-RecTM Diode Features Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base... See More ⇒

Detailed specifications: BVSS84L, BW3402, BWS2301, BXL4004, BXL4004-1E, C2M0080120D, C2M0160120D, C2M1000170D, IRF9640, CCS050M12CM2, CCS5Y3315CM, CDM22010-650, CDM4-650, CDM7-650, CHM003TGP, CHM02N6ANGP, CHM02N6GPAGP

Keywords - CAS100H12AM1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.