All MOSFET. CAS100H12AM1 Datasheet

 

CAS100H12AM1 Datasheet and Replacement


   Type Designator: CAS100H12AM1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 168 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 970 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MODULE
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CAS100H12AM1 Datasheet (PDF)

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CAS100H12AM1

CAS100H12AM1VDS 1.2 kV1.2 kV, 100A Silicon Carbide RDS(on) (TJ = 25C) 16 mHalf-Bridge ModuleEOFF (TJ = 125C) 1.8 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) AlSiC Base

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STM4615 | CED05N8 | MC08N005C | AON6794 | RJK6026DPE | IRLR024 | BL10N70-A

Keywords - CAS100H12AM1 MOSFET datasheet

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