CCS050M12CM2 Specs and Replacement

Type Designator: CCS050M12CM2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 87 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: SIX-PACK

CCS050M12CM2 substitution

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CCS050M12CM2 datasheet

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CCS050M12CM2

VDS 1.2 kV CCS050M12CM2 1.2kV, 50A Silicon Carbide RDS(on) (TJ = 25 C) 25 m Six-Pack (Three Phase) Module EOFF (TJ = 150 C) 0.6 mJ Z-FETTM MOSFET and Z-RecTM Diode Features Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBC Sy... See More ⇒

Detailed specifications: BW3402, BWS2301, BXL4004, BXL4004-1E, C2M0080120D, C2M0160120D, C2M1000170D, CAS100H12AM1, IRFB7545, CCS5Y3315CM, CDM22010-650, CDM4-650, CDM7-650, CHM003TGP, CHM02N6ANGP, CHM02N6GPAGP, CHM02N6PAGP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.