CCS050M12CM2 MOSFET. Datasheet pdf. Equivalent
Type Designator: CCS050M12CM2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 87 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 393 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SIX-PACK
CCS050M12CM2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CCS050M12CM2 Datasheet (PDF)
ccs050m12cm2.pdf
VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCEA60ND08S
History: NCEA60ND08S
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918