All MOSFET. CCS050M12CM2 Datasheet

 

CCS050M12CM2 Datasheet and Replacement


   Type Designator: CCS050M12CM2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 393 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SIX-PACK
 

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CCS050M12CM2 Datasheet (PDF)

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CCS050M12CM2

VDS 1.2 kVCCS050M12CM21.2kV, 50A Silicon Carbide RDS(on) (TJ = 25C) 25 mSix-Pack (Three Phase) ModuleEOFF (TJ = 150C) 0.6 mJZ-FETTM MOSFET and Z-RecTM DiodeFeatures Package Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation Positive Temperature Coefficient on VF and VDS(on) Cu Baseplate, AlN DBCSy

Datasheet: BW3402 , BWS2301 , BXL4004 , BXL4004-1E , C2M0080120D , C2M0160120D , C2M1000170D , CAS100H12AM1 , 8N60 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 , CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP .

History: VBMB165R10 | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654

Keywords - CCS050M12CM2 MOSFET datasheet

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