All MOSFET. CDM22010-650 Datasheet

 

CDM22010-650 Datasheet and Replacement


   Type Designator: CDM22010-650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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CDM22010-650 Datasheet (PDF)

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CDM22010-650

CDM22010-650www.centralsemi.comSILICON N-CHANNEL POWER MOSFETDESCRIPTION:10 AMP, 650 VOLTThe CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres

Datasheet: BXL4004 , BXL4004-1E , C2M0080120D , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , IRF9640 , CDM4-650 , CDM7-650 , CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP .

History: TK22A65X5 | IXTP86N20T | 2SK1573 | FK30SM-6 | IPD80R2K8CE | SFG280N08KF

Keywords - CDM22010-650 MOSFET datasheet

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