CDM22010-650 Specs and Replacement

Type Designator: CDM22010-650

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

CDM22010-650 substitution

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CDM22010-650 datasheet

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CDM22010-650

CDM22010-650 www.centralsemi.com SILICON N-CHANNEL POWER MOSFET DESCRIPTION 10 AMP, 650 VOLT The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low thres... See More ⇒

Detailed specifications: BXL4004, BXL4004-1E, C2M0080120D, C2M0160120D, C2M1000170D, CAS100H12AM1, CCS050M12CM2, CCS5Y3315CM, K2611, CDM4-650, CDM7-650, CHM003TGP, CHM02N6ANGP, CHM02N6GPAGP, CHM02N6PAGP, CHM02N7NGP, CHM02N7PAGP

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