CDM4-650 Specs and Replacement

Type Designator: CDM4-650

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: DPAK

CDM4-650 substitution

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CDM4-650 datasheet

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 cdm4-650.pdf pdf_icon

CDM4-650

CDM4-650 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION MEDIUM POWER MOSFET The CENTRAL SEMICONDUCTOR CDM4-650 is a 4.0 AMP, 650 VOLT 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold v... See More ⇒

Detailed specifications: BXL4004-1E, C2M0080120D, C2M0160120D, C2M1000170D, CAS100H12AM1, CCS050M12CM2, CCS5Y3315CM, CDM22010-650, EMB04N03H, CDM7-650, CHM003TGP, CHM02N6ANGP, CHM02N6GPAGP, CHM02N6PAGP, CHM02N7NGP, CHM02N7PAGP, CHM0410JGP

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.