All MOSFET. CDM4-650 Datasheet

 

CDM4-650 Datasheet and Replacement


   Type Designator: CDM4-650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: DPAK
 

 CDM4-650 substitution

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CDM4-650 Datasheet (PDF)

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CDM4-650

CDM4-650SURFACE MOUNT SILICON www.centralsemi.comN-CHANNELDESCRIPTION: MEDIUM POWER MOSFETThe CENTRAL SEMICONDUCTOR CDM4-650 is a4.0 AMP, 650 VOLT650 volt N-Channel MOSFET designed for high voltage,fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold v

Datasheet: BXL4004-1E , C2M0080120D , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , AO3407 , CDM7-650 , CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP .

History: ZXMN2B01F | FK8V0304 | IRFH5302TRPBF | STW21N90K5 | ZXMN2B14FH | FK8V0606 | WM02N70ME

Keywords - CDM4-650 MOSFET datasheet

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