All MOSFET. CDM4-650 Datasheet

 

CDM4-650 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CDM4-650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.4 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: DPAK

 CDM4-650 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CDM4-650 Datasheet (PDF)

 ..1. Size:897K  central
 cdm4-650.pdf

CDM4-650 CDM4-650

CDM4-650SURFACE MOUNT SILICON www.centralsemi.comN-CHANNELDESCRIPTION: MEDIUM POWER MOSFETThe CENTRAL SEMICONDUCTOR CDM4-650 is a4.0 AMP, 650 VOLT650 volt N-Channel MOSFET designed for high voltage,fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold v

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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