All MOSFET. CDM4-650 Datasheet

 

CDM4-650 Datasheet and Replacement


   Type Designator: CDM4-650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: DPAK
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CDM4-650 Datasheet (PDF)

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CDM4-650

CDM4-650SURFACE MOUNT SILICON www.centralsemi.comN-CHANNELDESCRIPTION: MEDIUM POWER MOSFETThe CENTRAL SEMICONDUCTOR CDM4-650 is a4.0 AMP, 650 VOLT650 volt N-Channel MOSFET designed for high voltage,fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold v

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History: FDMS9620S | IXTH4N150 | WMM11N80M3 | IRFI7536G

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