All MOSFET. CDM7-650 Datasheet

 

CDM7-650 MOSFET. Datasheet pdf. Equivalent

Type Designator: CDM7-650

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.8 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 97 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: DPAK

CDM7-650 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CDM7-650 Datasheet (PDF)

0.1. cdm7-650.pdf Size:899K _central

CDM7-650
CDM7-650

CDM7-650 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: MEDIUM POWER MOSFET The CENTRAL SEMICONDUCTOR CDM7-650 is a 7.0 AMP, 650 VOLT 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold vo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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