CDM7-650 PDF and Equivalents Search

 

CDM7-650 Specs and Replacement


   Type Designator: CDM7-650
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK
 

 CDM7-650 substitution

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CDM7-650 datasheet

 ..1. Size:899K  central
cdm7-650.pdf pdf_icon

CDM7-650

CDM7-650 SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION MEDIUM POWER MOSFET The CENTRAL SEMICONDUCTOR CDM7-650 is a 7.0 AMP, 650 VOLT 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold vo... See More ⇒

Detailed specifications: C2M0080120D , C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , RU7088R , CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP .

History: NCEP080N10F | BLF879P | DH060N07D | 2SK3977 | DMN2013UFX | RFD8P06E | NTUD3169CZ

Keywords - CDM7-650 MOSFET specs

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