All MOSFET. CHM02N7NGP Datasheet

 

CHM02N7NGP MOSFET. Datasheet pdf. Equivalent

Type Designator: CHM02N7NGP

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 1.9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 26 nS

Maximum Drain-Source On-State Resistance (Rds): 6.6 Ohm

Package: D2PAK

CHM02N7NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CHM02N7NGP Datasheet (PDF)

1.1. chm02n7ngp.pdf Size:107K _update_mosfet

CHM02N7NGP
CHM02N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM02N7NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(

3.1. chm02n7pagp.pdf Size:97K _update_mosfet

CHM02N7NGP
CHM02N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM02N7PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 700 Volts CURRENT 1.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

 4.1. chm02n6pagp.pdf Size:97K _update_mosfet

CHM02N7NGP
CHM02N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe

4.2. chm02n6gpagp.pdf Size:86K _update_mosfet

CHM02N7NGP
CHM02N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6GPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 600 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High pow

 4.3. chm02n6angp.pdf Size:107K _update_mosfet

CHM02N7NGP
CHM02N7NGP

CHENMKO ENTERPRISE CO.,LTD CHM02N6ANGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 1.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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