CHM05N65PAGP PDF Specs and Replacement
Type Designator: CHM05N65PAGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: DPAK
CHM05N65PAGP substitution
CHM05N65PAGP PDF Specs
chm05n65pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. D-PAK(TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capabilit... See More ⇒
chm05p03ngp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM05P03NGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(... See More ⇒
Detailed specifications: CHM003TGP , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , IRF3205 , CHM05P03NGP , CHM06N5NGP , CHM09N6NGP , CHM09N7NGP , CHM1012LPAGP , CHM1012PAGP , CHM1012TGP , CHM1013TGP .
History: FDS5672 | STA6610 | FDS6298 | FDS8813NZ | FDS6692A
Keywords - CHM05N65PAGP MOSFET specs
CHM05N65PAGP cross reference
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CHM05N65PAGP replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FDS5672 | STA6610 | FDS6298 | FDS8813NZ | FDS6692A
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