All MOSFET. CHM05P03NGP Datasheet

 

CHM05P03NGP MOSFET. Datasheet pdf. Equivalent

Type Designator: CHM05P03NGP

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8 nC

Rise Time (tr): 11 nS

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: D2PAK

CHM05P03NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM05P03NGP Datasheet (PDF)

1.1. chm05p03ngp.pdf Size:92K _update_mosfet

CHM05P03NGP
CHM05P03NGP

CHENMKO ENTERPRISE CO.,LTD CHM05P03NGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK ) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(

5.1. chm05n65pagp.pdf Size:336K _update_mosfet

CHM05P03NGP
CHM05P03NGP

CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. D-PAK(TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capabilit

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