CHM11C2JGP Specs and Replacement

Type Designator: CHM11C2JGP

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO-8

CHM11C2JGP substitution

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CHM11C2JGP datasheet

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CHM11C2JGP

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM11C2JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 30 Volts CURRENT 7 Ampere P-channel VOLTAGE 20 Volts CURRENT 4.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low R... See More ⇒

Detailed specifications: CHM09N7NGP, CHM1012LPAGP, CHM1012PAGP, CHM1012TGP, CHM1013TGP, CHM1023VGP, CHM1024VGP, CHM10N4NGP, IRFB4110, CHM1203EVJGP, CHM1273GP, CHM1273XGP, CHM12N10PAGP, CHM12P10NGP, CHM1304WGP, CHM1305WGP, CHM13N07PAGP

Keywords - CHM11C2JGP MOSFET specs

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