NDH8502P Datasheet and Replacement
Type Designator: NDH8502P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SUPERSOT8
NDH8502P substitution
NDH8502P Datasheet (PDF)
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Datasheet: NDH8301N , NDH8302P , NDH8303N , NDH8304P , NDH831N , NDH832P , NDH833N , NDH834P , AON7408 , NDH8503N , NDH8504P , NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , NDP410A .
History: OSG55R160PZF
Keywords - NDH8502P MOSFET datasheet
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History: OSG55R160PZF
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