All MOSFET. CHM25N15LPAGP Datasheet

 

CHM25N15LPAGP Datasheet and Replacement


   Type Designator: CHM25N15LPAGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-252
 

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CHM25N15LPAGP Datasheet (PDF)

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CHM25N15LPAGP

CHENMKO ENTERPRISE CO.,LTDCHM25N15LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 150 Volts CURRENT 25 AmpereAPPLICATION* Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON)..094 (2.40).280 (7.10)* High power and current handing capa

Datasheet: CHM2323GP , CHM2331GP , CHM2331QGP , CHM2342GP , CHM2346ESGP , CHM2362GP , CHM2401JGP , CHM2407JGP , P0903BDG , CHM2703QGP , CHM3032JGP , CHM3055LAPAGP , CHM3055LXGP , CHM3055ZGP , CHM3060JGP , CHM3082JGP , CHM3083JGP .

History: AP70SL1K4BH | DI9430T | BSB014N04LX3G | TPA70R450C | YTF251 | 6N60KG-TF1-T | AOSS21115C

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