CHM25N15LPAGP PDF and Equivalents Search

 

CHM25N15LPAGP Specs and Replacement

Type Designator: CHM25N15LPAGP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-252

CHM25N15LPAGP substitution

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CHM25N15LPAGP datasheet

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CHM25N15LPAGP

CHENMKO ENTERPRISE CO.,LTD CHM25N15LPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capa... See More ⇒

Detailed specifications: CHM2323GP, CHM2331GP, CHM2331QGP, CHM2342GP, CHM2346ESGP, CHM2362GP, CHM2401JGP, CHM2407JGP, IRF1407, CHM2703QGP, CHM3032JGP, CHM3055LAPAGP, CHM3055LXGP, CHM3055ZGP, CHM3060JGP, CHM3082JGP, CHM3083JGP

Keywords - CHM25N15LPAGP MOSFET specs

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