All MOSFET. CHM3545SGP Datasheet

 

CHM3545SGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM3545SGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.4 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT-363

 CHM3545SGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM3545SGP Datasheet (PDF)

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 chm3545sgp.pdf

CHM3545SGP CHM3545SGP

CHENMKO ENTERPRISE CO.,LTDCHM3545SGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 40 Volts CURRENT 0.3 AmpereAPPLICATION* Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.* High saturation current capability. Direct Logic-Level Interface: TTL/CMOS SC-88/SOT-363* Battery Operated Systems FEATURE(1)(S1) (D1)(6

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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