CHM3K33VESGP Datasheet and Replacement
Type Designator: CHM3K33VESGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 8.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT-563
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CHM3K33VESGP Datasheet (PDF)
chm3k33vesgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM3K33VESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 200 mAmpereAPPLICATION* High speed switching. Analog switching.FEATURESOT-563* Small surface mounting type. (SC-88/SOT-363)* Input impedance is high, and not necessary to consider a driveelectric current. * High speed switching. (1)* Small p
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - CHM3K33VESGP MOSFET datasheet
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History: SM6A12NSFP | FCPF7N60YDTU



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