All MOSFET. CHM3K33VESGP Datasheet

 

CHM3K33VESGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM3K33VESGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 8.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: SOT-563

 CHM3K33VESGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM3K33VESGP Datasheet (PDF)

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 chm3k33vesgp.pdf

CHM3K33VESGP CHM3K33VESGP

CHENMKO ENTERPRISE CO.,LTDCHM3K33VESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 200 mAmpereAPPLICATION* High speed switching. Analog switching.FEATURESOT-563* Small surface mounting type. (SC-88/SOT-363)* Input impedance is high, and not necessary to consider a driveelectric current. * High speed switching. (1)* Small p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CTP06N6P8 | BUZ80 | KI4511DY | BRCS080N02RA | STB4N62K3

 

 
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