CHM3K33VESGP Specs and Replacement
Type Designator: CHM3K33VESGP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 8.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: SOT-563
CHM3K33VESGP substitution
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CHM3K33VESGP datasheet
chm3k33vesgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM3K33VESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 200 mAmpere APPLICATION * High speed switching. Analog switching. FEATURE SOT-563 * Small surface mounting type. (SC-88/SOT-363) * Input impedance is high, and not necessary to consider a drive electric current. * High speed switching. (1) * Small p... See More ⇒
Detailed specifications: CHM3252ZGP, CHM3258JGP, CHM3301JGP, CHM3301PAGP, CHM3413KGP, CHM3413SGP, CHM3458QGP, CHM3545SGP, IRFB7545, CHM3U22SESGP, CHM3U22VESGP, CHM3U33SESGP, CHM4060APAGP, CHM41A2NGP, CHM41A2PAGP, CHM4201PAGP, CHM4204PAGP
Keywords - CHM3K33VESGP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMS140DNV6LG4
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