All MOSFET. NDP410A Datasheet

 

NDP410A Datasheet and Replacement


   Type Designator: NDP410A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO220
 

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NDP410A Datasheet (PDF)

 0.1. Size:57K  fairchild semi
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NDP410A

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BENDB410A / NDB410AE / NDB410B / NDB410BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field9 and 8A, 100V. RDS(ON) = 0.25 and 0.30. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell density

Datasheet: NDH8502P , NDH8503N , NDH8504P , NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , IRF4905 , NDP5060 , NDP5060L , NDP508A , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L .

History: ME25N15AL-G | AOC2804 | BSN304 | STU60N3LH5-S | IRF7701 | ME2306-G | STD3NK60Z

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