NDP410A Datasheet. Specs and Replacement

Type Designator: NDP410A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO220

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NDP410A datasheet

 0.1. Size:57K  fairchild semi
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NDP410A

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density... See More ⇒

Detailed specifications: NDH8502P, NDH8503N, NDH8504P, NDP4050, NDP4050L, NDP4060, NDP4060L, NDP408A, IRFP064N, NDP5060, NDP5060L, NDP508A, NDP510A, NDP6020, NDP6020P, NDP6030, NDP6030L

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