All MOSFET. CHM5506JGP Datasheet

 

CHM5506JGP Datasheet and Replacement


   Type Designator: CHM5506JGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SO-8
 

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CHM5506JGP Datasheet (PDF)

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CHM5506JGP

CHENMKO ENTERPRISE CO.,LTDCHM5506JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat

Datasheet: CHM4953JGP , CHM4955JGP , CHM50N06NGP , CHM50N06PAGP , CHM51A3PAGP , CHM51A3ZGP , CHM540ANGP , CHM540APAGP , 4N60 , CHM5813ESQ2GP , CHM5P03PAGP , CHM6030LPAGP , CHM6031LPAGP , CHM603ALPAGP , CHM6056PAGP , CHM6060NPAGP , CHM6060RNGP .

History: SI2318A | HGB390N25S | PMCXB900UE | 2SJ194 | IPD053N06N | BLP03N10-F | HUFA76413P3

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