All MOSFET. CHM5813ESQ2GP Datasheet

 

CHM5813ESQ2GP Datasheet and Replacement


   Type Designator: CHM5813ESQ2GP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 624 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X2
 

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CHM5813ESQ2GP Datasheet (PDF)

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CHM5813ESQ2GP

CHENMKO ENTERPRISE CO.,LTDCHM5813ESQ2GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 12 Volts CURRENT 9 AmpereAPPLICATION* Power Management in Note Book* Portable Equipment* Battery Powered System* BLoad SwitchDFN 3x2* DSCFEATURE* Small flat package. ( DFN 3x2 )0.65(TYP) 0.25~0.35* Super high density cell design for extremely low RDS(ON).

Datasheet: CHM4955JGP , CHM50N06NGP , CHM50N06PAGP , CHM51A3PAGP , CHM51A3ZGP , CHM540ANGP , CHM540APAGP , CHM5506JGP , IRF4905 , CHM5P03PAGP , CHM6030LPAGP , CHM6031LPAGP , CHM603ALPAGP , CHM6056PAGP , CHM6060NPAGP , CHM6060RNGP , CHM6060RPAGP .

History: MTN003N03S3 | P0910AS | IXTH260N055T2 | P3202CMA | PMT29EN | IPP80P03P4L-07 | P3606NEA

Keywords - CHM5813ESQ2GP MOSFET datasheet

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