CHM5813ESQ2GP Datasheet. Specs and Replacement

Type Designator: CHM5813ESQ2GP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 624 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X2

CHM5813ESQ2GP substitution

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CHM5813ESQ2GP datasheet

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CHM5813ESQ2GP

CHENMKO ENTERPRISE CO.,LTD CHM5813ESQ2GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 12 Volts CURRENT 9 Ampere APPLICATION * Power Management in Note Book * Portable Equipment * Battery Powered System * BLoad Switch DFN 3x2 * DSC FEATURE * Small flat package. ( DFN 3x2 ) 0.65(TYP) 0.25 0.35 * Super high density cell design for extremely low RDS(ON).... See More ⇒

Detailed specifications: CHM4955JGP, CHM50N06NGP, CHM50N06PAGP, CHM51A3PAGP, CHM51A3ZGP, CHM540ANGP, CHM540APAGP, CHM5506JGP, 5N65, CHM5P03PAGP, CHM6030LPAGP, CHM6031LPAGP, CHM603ALPAGP, CHM6056PAGP, CHM6060NPAGP, CHM6060RNGP, CHM6060RPAGP

Keywords - CHM5813ESQ2GP MOSFET specs

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