CHT-SNMOS80 Datasheet and Replacement
Type Designator: CHT-SNMOS80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 225 °C
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 8.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.93 Ohm
Package: TO-39 TO-18
CHT-SNMOS80 substitution
CHT-SNMOS80 Datasheet (PDF)
cht-snmos80.pdf

The Leader in High Temperature Semiconductor Solutions MERCURY: CHT-SNMOS80 Version: 2.6 23-Mar-12 DATASHEET Last Modified Date High-Temperature Small-signal N-channel MOSFET General description Features The CHT-SNMOS-80 is a high voltage 80V Qualified from -55 to +225C (Tj) N-channel small-signal MOSFET designed Drain voltage up to 80V to achieve high performa
Datasheet: CHT2303GP , CHT2312GP , CHT2324GP , CHT84GP , CHT84SGP , CHT84VGP , CHT84WGP , CHT870GP , IRFP250 , CM697 , CM800 , CM860 , CMF10120D , CMF20120D , CMKDM8005 , CMLDM3737 , CMLDM3757 .
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