CHT-SNMOS80 Specs and Replacement

Type Designator: CHT-SNMOS80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.45 A

Tj ⓘ - Maximum Junction Temperature: 225 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 8.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.93 Ohm

Package: TO-39 TO-18

CHT-SNMOS80 substitution

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CHT-SNMOS80 datasheet

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CHT-SNMOS80

The Leader in High Temperature Semiconductor Solutions MERCURY CHT-SNMOS80 Version 2.6 23-Mar-12 DATASHEET Last Modified Date High-Temperature Small-signal N-channel MOSFET General description Features The CHT-SNMOS-80 is a high voltage 80V Qualified from -55 to +225 C (Tj) N-channel small-signal MOSFET designed Drain voltage up to 80V to achieve high performa... See More ⇒

Detailed specifications: CHT2303GP, CHT2312GP, CHT2324GP, CHT84GP, CHT84SGP, CHT84VGP, CHT84WGP, CHT870GP, AON7506, CM697, CM800, CM860, CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, CMLDM3757

Keywords - CHT-SNMOS80 MOSFET specs

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