All MOSFET. CMF10120D Datasheet

 

CMF10120D Datasheet and Replacement


   Type Designator: CMF10120D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 135 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-247-3
 
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CMF10120D Datasheet (PDF)

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CMF10120D

CMF10120D-Silicon Carbide Power MOSFET VDS = 1200 VZ-FETTM MOSFET RDS(on) N-Channel Enhancement Mode = 160 m Qg = 47 nCFeatures PackageD D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Pb-Free Plating, RoHS Compliant, Halogen Free G GSTO-247-3 S Benefits Higher System Efficiency

Datasheet: CHT84SGP , CHT84VGP , CHT84WGP , CHT870GP , CHT-SNMOS80 , CM697 , CM800 , CM860 , P60NF06 , CMF20120D , CMKDM8005 , CMLDM3737 , CMLDM3757 , CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 .

History: NCE2006NE

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