CMF10120D Datasheet and Replacement
Type Designator: CMF10120D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 134 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 135 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-247-3
CMF10120D substitution
CMF10120D Datasheet (PDF)
cmf10120d.pdf
CMF10120D-Silicon Carbide Power MOSFET VDS = 1200 VZ-FETTM MOSFET RDS(on) N-Channel Enhancement Mode = 160 m Qg = 47 nCFeatures PackageD D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Pb-Free Plating, RoHS Compliant, Halogen Free G GSTO-247-3 S Benefits Higher System Efficiency
Datasheet: CHT84SGP , CHT84VGP , CHT84WGP , CHT870GP , CHT-SNMOS80 , CM697 , CM800 , CM860 , IRFP450 , CMF20120D , CMKDM8005 , CMLDM3737 , CMLDM3757 , CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 .
History: VBMB1638 | NVTFS4C10N | CS3N80BK | 2SK3457 | AP6N100H | 2SJ274 | DH081N03E
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History: VBMB1638 | NVTFS4C10N | CS3N80BK | 2SK3457 | AP6N100H | 2SJ274 | DH081N03E
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