All MOSFET. CMF20120D Datasheet

 

CMF20120D Datasheet and Replacement


   Type Designator: CMF20120D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 135 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247-3
 

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CMF20120D Datasheet (PDF)

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CMF20120D

VDS 1200 VCMF20120D-Silicon Carbide Power MOSFET ID(MAX) 42 AZ-FETTM MOSFET RDS(on) 80m N-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantTO-247-3 Benefits Hi

Datasheet: CHT84VGP , CHT84WGP , CHT870GP , CHT-SNMOS80 , CM697 , CM800 , CM860 , CMF10120D , 18N50 , CMKDM8005 , CMLDM3737 , CMLDM3757 , CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 , CMLDM7003E .

History: OSG70R1K4FF | 2SK2130 | IXTA4N150HV | PMZ320UPE | SLD60R380S2 | SI7806ADN

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