CMF20120D Specs and Replacement

Type Designator: CMF20120D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 135 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-247-3

CMF20120D substitution

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CMF20120D datasheet

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 cmf20120d.pdf pdf_icon

CMF20120D

VDS 1200 V CMF20120D-Silicon Carbide Power MOSFET ID(MAX) 42 A Z-FETTM MOSFET RDS(on) 80m N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Hi... See More ⇒

Detailed specifications: CHT84VGP, CHT84WGP, CHT870GP, CHT-SNMOS80, CM697, CM800, CM860, CMF10120D, BS170, CMKDM8005, CMLDM3737, CMLDM3757, CMLDM5757, CMLDM7002A, CMLDM7002AJ, CMLDM7003, CMLDM7003E

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