All MOSFET. CMF20120D Datasheet

 

CMF20120D Datasheet and Replacement


   Type Designator: CMF20120D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 135 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247-3
 

 CMF20120D substitution

   - MOSFET ⓘ Cross-Reference Search

 

CMF20120D Datasheet (PDF)

 ..1. Size:758K  cree
 cmf20120d.pdf pdf_icon

CMF20120D

VDS 1200 VCMF20120D-Silicon Carbide Power MOSFET ID(MAX) 42 AZ-FETTM MOSFET RDS(on) 80m N-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantTO-247-3 Benefits Hi

Datasheet: CHT84VGP , CHT84WGP , CHT870GP , CHT-SNMOS80 , CM697 , CM800 , CM860 , CMF10120D , 18N50 , CMKDM8005 , CMLDM3737 , CMLDM3757 , CMLDM5757 , CMLDM7002A , CMLDM7002AJ , CMLDM7003 , CMLDM7003E .

History: RAL035P01 | RAL045P01

Keywords - CMF20120D MOSFET datasheet

 CMF20120D cross reference
 CMF20120D equivalent finder
 CMF20120D lookup
 CMF20120D substitution
 CMF20120D replacement

 

 
Back to Top

 


 
.