CMKDM8005 Specs and Replacement

Type Designator: CMKDM8005

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: SOT-363

CMKDM8005 substitution

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CMKDM8005 datasheet

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 cmkdm8005.pdf pdf_icon

CMKDM8005

CMKDM8005 SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMKDM8005 SILICON MOSFETS consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE C85M FEATURES SOT-363 CASE E... See More ⇒

Detailed specifications: CHT84WGP, CHT870GP, CHT-SNMOS80, CM697, CM800, CM860, CMF10120D, CMF20120D, 4N60, CMLDM3737, CMLDM3757, CMLDM5757, CMLDM7002A, CMLDM7002AJ, CMLDM7003, CMLDM7003E, CMLDM7003J

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.