CMT01N60 Specs and Replacement

Type Designator: CMT01N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO-251

CMT01N60 substitution

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CMT01N60 datasheet

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 cmt01n60.pdf pdf_icon

CMT01N60

CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w... See More ⇒

Detailed specifications: CMPF5485, CMPF5486, CMPFJ175, CMPFJ176, CMPFJ310, CMRDM3575, CMRDM3590, CMRDM7590, AON6414A, CMT14N50, CMT2N7002, CMT2N7002AG, CMT2N7002K, CMT2N7002WG, CMUDM7001, CMUDM7004, CMUDM7005

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.