All MOSFET. CMT01N60 Datasheet

 

CMT01N60 Datasheet and Replacement


   Type Designator: CMT01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
   Package: TO-251
 

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CMT01N60 Datasheet (PDF)

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CMT01N60

CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

Datasheet: CMPF5485 , CMPF5486 , CMPFJ175 , CMPFJ176 , CMPFJ310 , CMRDM3575 , CMRDM3590 , CMRDM7590 , IRFB4110 , CMT14N50 , CMT2N7002 , CMT2N7002AG , CMT2N7002K , CMT2N7002WG , CMUDM7001 , CMUDM7004 , CMUDM7005 .

History: IRFSL3107PBF | AON6206

Keywords - CMT01N60 MOSFET datasheet

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