All MOSFET. CMT14N50 Datasheet

 

CMT14N50 Datasheet and Replacement


   Type Designator: CMT14N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 307 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO-220FP
 

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CMT14N50 Datasheet (PDF)

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CMT14N50

CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w

Datasheet: CMPF5486 , CMPFJ175 , CMPFJ176 , CMPFJ310 , CMRDM3575 , CMRDM3590 , CMRDM7590 , CMT01N60 , IRFP250N , CMT2N7002 , CMT2N7002AG , CMT2N7002K , CMT2N7002WG , CMUDM7001 , CMUDM7004 , CMUDM7005 , CMUDM7590 .

History: IXTQ88N28T | AP6906GH-HF | SI8461DB | 2SK1464 | AOL1413 | 2SK615 | AOL1428

Keywords - CMT14N50 MOSFET datasheet

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