CMT14N50 Specs and Replacement
Type Designator: CMT14N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 307 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO-220FP
CMT14N50 substitution
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CMT14N50 datasheet
cmt14n50.pdf
CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to w... See More ⇒
Detailed specifications: CMPF5486, CMPFJ175, CMPFJ176, CMPFJ310, CMRDM3575, CMRDM3590, CMRDM7590, CMT01N60, IRFB4115, CMT2N7002, CMT2N7002AG, CMT2N7002K, CMT2N7002WG, CMUDM7001, CMUDM7004, CMUDM7005, CMUDM7590
Keywords - CMT14N50 MOSFET specs
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