All MOSFET. CMXDM7002A Datasheet

 

CMXDM7002A Datasheet and Replacement


   Type Designator: CMXDM7002A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-26
 

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CMXDM7002A Datasheet (PDF)

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CMXDM7002A

CMXDM7002ASURFACE MOUNT www.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMXDM7002A SILICON MOSFETSis special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor dev

Datasheet: CMT2N7002WG , CMUDM7001 , CMUDM7004 , CMUDM7005 , CMUDM7590 , CMUDM8001 , CMUDM8004 , CMUDM8005 , IRF1010E , CP640 , CP643 , CP650 , CP651 , CP664 , CP665 , CP666 , CS04CN10 .

History: IRFP4410ZPBF | NCE65T1K9K | AP60T03GS | QM2507W | SUD45P04-16P | IRFS840 | 2SJ604-S

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