CMXDM7002A Datasheet and Replacement
Type Designator: CMXDM7002A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-26
CMXDM7002A substitution
CMXDM7002A Datasheet (PDF)
cmxdm7002a.pdf

CMXDM7002ASURFACE MOUNT www.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMXDM7002A SILICON MOSFETSis special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor dev
Datasheet: CMT2N7002WG , CMUDM7001 , CMUDM7004 , CMUDM7005 , CMUDM7590 , CMUDM8001 , CMUDM8004 , CMUDM8005 , IRF1010E , CP640 , CP643 , CP650 , CP651 , CP664 , CP665 , CP666 , CS04CN10 .
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History: KI4330DY | RFP2N20



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