CMXDM7002A Specs and Replacement

Type Designator: CMXDM7002A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT-26

CMXDM7002A substitution

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CMXDM7002A datasheet

 ..1. Size:491K  central
 cmxdm7002a.pdf pdf_icon

CMXDM7002A

CMXDM7002A SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMXDM7002A SILICON MOSFETS is special dual version of the 2N7002 Enhancement- mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor dev... See More ⇒

Detailed specifications: CMT2N7002WG, CMUDM7001, CMUDM7004, CMUDM7005, CMUDM7590, CMUDM8001, CMUDM8004, CMUDM8005, IRF9540N, CP640, CP643, CP650, CP651, CP664, CP665, CP666, CS04CN10

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