CMXDM7002A Datasheet and Replacement
Type Designator: CMXDM7002A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
|Id|ⓘ - Maximum Drain Current: 0.28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-26
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CMXDM7002A Datasheet (PDF)
cmxdm7002a.pdf

CMXDM7002ASURFACE MOUNT www.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMXDM7002A SILICON MOSFETSis special dual version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special Dual Transistor dev
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTMFS6H836N | AOB12N65L | APT4014BVFRG | AM4935P | APT10021JFLL | HM12N60 | NTR1P02LT1G
Keywords - CMXDM7002A MOSFET datasheet
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History: NTMFS6H836N | AOB12N65L | APT4014BVFRG | AM4935P | APT10021JFLL | HM12N60 | NTR1P02LT1G



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