CS1010EA8 Specs and Replacement

Type Designator: CS1010EA8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 120 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-220AB

CS1010EA8 substitution

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CS1010EA8 datasheet

 ..1. Size:1187K  wuxi china
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CS1010EA8

Silicon N-Channel Power MOSFET R CS1010E A8 VDSS 60 V General Description ID 120 A CS1010E A8, the silicon N-channel Enhanced PD (TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 8.1. Size:75K  china
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CS1010EA8

LJ2015-35 CS1010 N T =25 2 A P W D T =25 200 C 1.4 W/ I V =10V,T =25 75 A D GS C I V =10V,T =100 55 A D GS C I 330 A DM V 20 V GS T +150 jm T -55 +150 stg R 62 th(J-a ) ... See More ⇒

Detailed specifications: CP650, CP651, CP664, CP665, CP666, CS04CN10, CS100N03B4, CS1010, AON7410, CS10J60A4-G, CS10N60A8HD, CS10N60F, CS10N60FA9HD, CS10N65A8HD, CS10N65FA9HD, CS10N70A8D, CS10N70FA9D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.