All MOSFET. CS1010EA8 Datasheet

 

CS1010EA8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS1010EA8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 120 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220AB

 CS1010EA8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS1010EA8 Datasheet (PDF)

 ..1. Size:1187K  wuxi china
 cs1010ea8.pdf

CS1010EA8 CS1010EA8

Silicon N-Channel Power MOSFET R CS1010E A8 VDSS 60 V General Description ID 120 A CS1010E A8, the silicon N-channel Enhanced PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.5 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:75K  china
 cs1010.pdf

CS1010EA8

LJ2015-35CS1010 N T =25 2AP WDT =25 200C 1.4 W/I V =10V,T =25 75 AD GS C I V =10V,T =100 55 AD GS CI 330 ADMV 20 VGST +150 jmT -55 +150 stgR 62th(J-a )

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