All MOSFET. CS10J60A4-G Datasheet

 

CS10J60A4-G Datasheet and Replacement


   Type Designator: CS10J60A4-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29.5 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-252
 

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CS10J60A4-G Datasheet (PDF)

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CS10J60A4-G

Silicon N-Channel Power MOSFET R CS10J60 A4-G General Description VDSS 600 V CS10J60 A4-G, the silicon N-channel Enhanced MOSFETs, is ID 10 A PD(TC=25) 70 W obtained by the super junction technology which reduces the RDS(ON)Typ 0.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: CP651 , CP664 , CP665 , CP666 , CS04CN10 , CS100N03B4 , CS1010 , CS1010EA8 , 4N60 , CS10N60A8HD , CS10N60F , CS10N60FA9HD , CS10N65A8HD , CS10N65FA9HD , CS10N70A8D , CS10N70FA9D , CS10N80A8D .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - CS10J60A4-G MOSFET datasheet

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