CS10J60A4-G Specs and Replacement

Type Designator: CS10J60A4-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29.5 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-252

CS10J60A4-G substitution

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CS10J60A4-G datasheet

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CS10J60A4-G

Silicon N-Channel Power MOSFET R CS10J60 A4-G General Description VDSS 600 V CS10J60 A4-G, the silicon N-channel Enhanced MOSFETs, is ID 10 A PD(TC=25 ) 70 W obtained by the super junction technology which reduces the RDS(ON)Typ 0.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

Detailed specifications: CP651, CP664, CP665, CP666, CS04CN10, CS100N03B4, CS1010, CS1010EA8, 12N60, CS10N60A8HD, CS10N60F, CS10N60FA9HD, CS10N65A8HD, CS10N65FA9HD, CS10N70A8D, CS10N70FA9D, CS10N80A8D

Keywords - CS10J60A4-G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs