CS110N03A3 Datasheet and Replacement
Type Designator: CS110N03A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO-251
CS110N03A3 substitution
CS110N03A3 Datasheet (PDF)
cs110n03a3.pdf

Silicon N-Channel Power MOSFET RCS110N03 A3 General Description VDSS 30 V CS110N03 A3, the silicon N-channel Enhanced ID 110 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
jcs110n07.pdf

N N-CHANNEL MOSFET JCS110N07I Package MAIN CHARACTERISTICS 110A I D 70V VDSS Rdson-max 8m - (@Vgs=10V 72nC Qg-typ APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Aut
jcs110n07i.pdf

N N-CHANNEL MOSFET JCS110N07I MAIN CHARACTERISTICS Package ID 110A VDSS 70V Rdson-max - 8m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app
Datasheet: CS10N60F , CS10N60FA9HD , CS10N65A8HD , CS10N65FA9HD , CS10N70A8D , CS10N70FA9D , CS10N80A8D , CS10N80FA9D , 20N50 , CS1119 , CS11P40 , CS120 , CS120A , CS120NF10 , CS123 , CS12N10 , CS12N60 .
History: HYG023N03LR1U | STB11NM60FD-1 | SIHFD9110 | CS10N70FA9D | BL3N100-P | MTN12N65FP | AP9972GR
Keywords - CS110N03A3 MOSFET datasheet
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History: HYG023N03LR1U | STB11NM60FD-1 | SIHFD9110 | CS10N70FA9D | BL3N100-P | MTN12N65FP | AP9972GR



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