All MOSFET. CS110N03A3 Datasheet

 

CS110N03A3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS110N03A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO-251

 CS110N03A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS110N03A3 Datasheet (PDF)

 ..1. Size:733K  wuxi china
cs110n03a3.pdf

CS110N03A3
CS110N03A3

Silicon N-Channel Power MOSFET RCS110N03 A3 General Description VDSS 30 V CS110N03 A3, the silicon N-channel Enhanced ID 110 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:502K  jilin sino
jcs110n07.pdf

CS110N03A3
CS110N03A3

N N-CHANNEL MOSFET JCS110N07I Package MAIN CHARACTERISTICS 110A I D 70V VDSS Rdson-max 8m - (@Vgs=10V 72nC Qg-typ APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Aut

 7.2. Size:476K  jilin sino
jcs110n07i.pdf

CS110N03A3
CS110N03A3

N N-CHANNEL MOSFET JCS110N07I MAIN CHARACTERISTICS Package ID 110A VDSS 70V Rdson-max - 8m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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