CS1119 Specs and Replacement
Type Designator: CS1119
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO-254
CS1119 substitution
- MOSFET ⓘ Cross-Reference Search
CS1119 datasheet
cs1119.pdf
CS1119 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 4 A IDM 12 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=10 mA 900 V RDS on VGS=10V,ID=2A 3.0 3.8 VGS th VDS=10V,ID=1... See More ⇒
Detailed specifications: CS10N60FA9HD, CS10N65A8HD, CS10N65FA9HD, CS10N70A8D, CS10N70FA9D, CS10N80A8D, CS10N80FA9D, CS110N03A3, TK10A60D, CS11P40, CS120, CS120A, CS120NF10, CS123, CS12N10, CS12N60, CS12N60A8H
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
