CS11P40 Specs and Replacement
Type Designator: CS11P40
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-257
CS11P40 substitution
- MOSFET ⓘ Cross-Reference Search
CS11P40 datasheet
cs11p40.pdf
CS11P40 P PD TC=25 125 W 1.0 W/ ID VGS=-10V,TC=25 -11 A ID VGS=-10V,TC=100 -7 A IDM -44 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W RthJA 62.5 /W BVDSS VGS=0V,ID=-0.25mA -400 V RDS on VGS=-10V,ID... See More ⇒
Detailed specifications: CS10N65A8HD, CS10N65FA9HD, CS10N70A8D, CS10N70FA9D, CS10N80A8D, CS10N80FA9D, CS110N03A3, CS1119, AO4407, CS120, CS120A, CS120NF10, CS123, CS12N10, CS12N60, CS12N60A8H, CS12N60A8HD
Keywords - CS11P40 MOSFET specs
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