CS140N10A Specs and Replacement

Type Designator: CS140N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-254DL

CS140N10A substitution

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CS140N10A datasheet

 ..1. Size:109K  china
 cs140n10a.pdf pdf_icon

CS140N10A

CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I... See More ⇒

 9.1. Size:1073K  jilin sino
 jcs1404c jcs1404s.pdf pdf_icon

CS140N10A

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 9.2. Size:630K  jilin sino
 jcs1404c jcs1404f.pdf pdf_icon

CS140N10A

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 9.3. Size:1748K  blue-rocket-elect
 brcs140p03yb.pdf pdf_icon

CS140N10A

BRCS140P03YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = -30V ID =-34 A (VGS = 20V) RDS(ON)@10V 14mR(Typ.12.8mR) HF Product. / Applications DC/DC ... See More ⇒

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Detailed specifications: CS12N60FA9HD, CS12N65A8H, CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, P60NF06, CS150, CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1

Keywords - CS140N10A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.