CS150N03A8 Datasheet. Specs and Replacement

The CS150N03A8 is a low-voltage N-channel power MOSFET designed for high-current switching applications. It features a 30V drain-source rating and very low Rds(on), enabling high efficiency and reduced conduction losses. The device is suitable for DC-DC converters, motor drivers, battery protection circuits, power management systems. Advantages: low Rds(on), fast switching speed, high current capability, good thermal performance. Disadvantages: limited to low-voltage applications and sensitive to electrostatic discharge. Design & Repair Tips: ensure proper gate drive voltage, use adequate PCB copper area or heatsinking for thermal management, replace only with MOSFETs of equal or better voltage, current, Rds(on) ratings.

Type Designator: CS150N03A8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO-220AB

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CS150N03A8 datasheet

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CS150N03A8

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b... See More ⇒

 6.1. Size:390K  crhj
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CS150N03A8

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 7.1. Size:169K  crhj
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CS150N03A8

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒

 7.2. Size:200K  wuxi china
 cs150n04a8.pdf pdf_icon

CS150N03A8

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒

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Detailed specifications: CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, CS150, 60N06, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H

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