CS150N03A8 MOSFET Datasheet: N-Ch, 30V, 150A. Full specification with pinout and replacement list

CS150N03A8 Specs and Replacement

The CS150N03A8 is a low-voltage N-channel power MOSFET designed for high-current switching applications. It features a 30V drain-source rating and very low Rds(on), enabling high efficiency and reduced conduction losses. The device is suitable for DC-DC converters, motor drivers, battery protection circuits, power management systems. Advantages: low Rds(on), fast switching speed, high current capability, good thermal performance. Disadvantages: limited to low-voltage applications and sensitive to electrostatic discharge. Design & Repair Tips: ensure proper gate drive voltage, use adequate PCB copper area or heatsinking for thermal management, replace only with MOSFETs of equal or better voltage, current, Rds(on) ratings.

   Type Designator: CS150N03A8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220AB

CS150N03A8 substitution

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CS150N03A8 datasheet

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Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b... See More ⇒

6.1. Size:390K crhj
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Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

7.1. Size:169K crhj
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Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒

7.2. Size:200K wuxi china
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