All MOSFET. CS1N50A1 Datasheet

 

CS1N50A1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS1N50A1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
   Package: TO-92

 CS1N50A1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS1N50A1 Datasheet (PDF)

 ..1. Size:545K  wuxi china
 cs1n50a1.pdf

CS1N50A1 CS1N50A1

Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:545K  crhj
 cs1n50 a1.pdf

CS1N50A1 CS1N50A1

Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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