CS1N50A1 PDF and Equivalents Search

 

CS1N50A1 Specs and Replacement

Type Designator: CS1N50A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 11 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm

Package: TO-92

CS1N50A1 substitution

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CS1N50A1 datasheet

 ..1. Size:545K  wuxi china
 cs1n50a1.pdf pdf_icon

CS1N50A1

Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.1. Size:545K  crhj
 cs1n50 a1.pdf pdf_icon

CS1N50A1

Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

Detailed specifications: CS140N10A , CS150 , CS150N03A8 , CS150N04A8 , CS15N60 , CS16N60A8H , CS19N40A8H , CS19N40AN , IRFZ46N , CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 .

Keywords - CS1N50A1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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