CS1N50A1 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS1N50A1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 11 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11 Ohm
Package: TO-92
CS1N50A1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS1N50A1 Datasheet (PDF)
cs1n50a1.pdf
Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs1n50 a1.pdf
Silicon N-Channel Power MOSFET R CS1N50 A1 General Description VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
