CS1N65A1 Datasheet. Specs and Replacement

Type Designator: CS1N65A1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm

Package: TO-92

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CS1N65A1 substitution

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CS1N65A1 datasheet

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CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.1. Size:533K  wuxi china
 cs1n65a3.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A3 General Description VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.1. Size:540K  crhj
 cs1n65 a1.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.2. Size:546K  crhj
 cs1n65 b1.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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Detailed specifications: CS1N50A1, CS1N60A1H, CS1N60A3H, CS1N60B1R, CS1N60B3R, CS1N60C1H, CS1N60C3H, CS1N60F, 3401, CS1N65A3, CS1N65B1, CS1N65B3, CS1N70A3H-G, CS1N80, CS1N80A1H, CS1N80A3H, CS1N80A4H

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