CS1N65A1 PDF and Equivalents Search

 

CS1N65A1 Specs and Replacement

Type Designator: CS1N65A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 10 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm

Package: TO-92

CS1N65A1 substitution

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CS1N65A1 datasheet

 ..1. Size:540K  wuxi china
 cs1n65a1.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 7.1. Size:533K  wuxi china
 cs1n65a3.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A3 General Description VDSS 650 V CS1N65 A3, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.1. Size:540K  crhj
 cs1n65 a1.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 8.2. Size:546K  crhj
 cs1n65 b1.pdf pdf_icon

CS1N65A1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

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Detailed specifications: CS1N50A1 , CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , RU7088R , CS1N65A3 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H .

Keywords - CS1N65A1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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