CS20N03D
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS20N03D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0136
Ohm
Package:
TO-252
CS20N03D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS20N03D
Datasheet (PDF)
..1. Size:352K foshan
cs20n03d.pdf
BRD20N03(CS20N03D) N-CHANNEL MOSFET/N MOS :DC/DC Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. :R C
7.1. Size:768K blue-rocket-elect
brcs20n03ip.pdf
BRCS20N03IP Rev.A Nov.-2019 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast speed switching. Halogen-free Product. / Applications
8.1. Size:1408K blue-rocket-elect
brcs20n06ip.pdf
BRCS20N06IP Rev.A Jan.-2020 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 astic Package. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC S
8.2. Size:1632K blue-rocket-elect
brcs20n06dp.pdf
BRCS20N06DP Rev.C Jun.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS=60V ; ID=20A RDSON@10V37m(Type.25m) RDSON@4.5V42m(Type.30m) HF Product. / Applications LED
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