CS20N03D Specs and Replacement

Type Designator: CS20N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm

Package: TO-252

CS20N03D substitution

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CS20N03D datasheet

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CS20N03D

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CS20N03D

BRCS20N06IP Rev.A Jan.-2020 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 astic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC S... See More ⇒

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Detailed specifications: CS1N65A3, CS1N65B1, CS1N65B3, CS1N70A3H-G, CS1N80, CS1N80A1H, CS1N80A3H, CS1N80A4H, IRF3205, CS20N50A8H, CS20N50ANH, CS20N60, CS20N60A8H, CS20N60ANH, CS20N60FA9H, CS20N65FA9H, CS20N90ANRD

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