CS2837AND Specs and Replacement

Type Designator: CS2837AND

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 117 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO-3P

CS2837AND substitution

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CS2837AND datasheet

 ..1. Size:3249K  citcorp
 cs2837and.pdf pdf_icon

CS2837AND

CS2837AND 500V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-3P ESD improved capability. Low gate charge. 0.193(4.9) Low reverse transfer capacitances. 0.185(4.7) 0.626(15.9) 0.063(1.6) 100% single pulse avalanche energy test. 0.594(15.1) 0.055(1.4) Marking code Mechanical data G D S Epoxy UL94-V0 rated flame retardant. ... See More ⇒

 ..2. Size:772K  wuxi china
 cs2837and.pdf pdf_icon

CS2837AND

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS2837 AND General Description VDSS 500 V CS2837 AND, the silicon N-channel Enhanced VDMOSFETs, is ID 20 A PD(TC=25 ) 230 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.18 conduction loss, improve switching performance and enhance the avalanche energy. The transistor c... See More ⇒

Detailed specifications: CS2232, CS2308, CS240, CS24N40A8, CS24N50, CS250, CS27P06, CS2807, IRFB4115, CS2907Z, CS2N50A4, CS2N60A3H, CS2N60A4H, CS2N60A4T, CS2N60A7H, CS2N60FA9H, CS2N60I

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