All MOSFET. CS2837AND Datasheet

 

CS2837AND Datasheet and Replacement


   Type Designator: CS2837AND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 117 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3P
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CS2837AND Datasheet (PDF)

 ..1. Size:3249K  citcorp
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CS2837AND

CS2837AND500V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-3P ESD improved capability. Low gate charge.0.193(4.9) Low reverse transfer capacitances. 0.185(4.7)0.626(15.9)0.063(1.6) 100% single pulse avalanche energy test.0.594(15.1)0.055(1.4)Marking code Mechanical dataG D S Epoxy : UL94-V0 rated flame retardant.

 ..2. Size:772K  wuxi china
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CS2837AND

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS2837 AND General Description VDSS 500 V CS2837 AND, the silicon N-channel Enhanced VDMOSFETs, is ID 20 A PD(TC=25) 230 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.18 conduction loss, improve switching performance and enhance the avalanche energy. The transistor c

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDP6030BL | APT51F50J | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

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