All MOSFET. CS2837AND Datasheet

 

CS2837AND Datasheet and Replacement


   Type Designator: CS2837AND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 117 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-3P
 

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CS2837AND Datasheet (PDF)

 ..1. Size:3249K  citcorp
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CS2837AND

CS2837AND500V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-3P ESD improved capability. Low gate charge.0.193(4.9) Low reverse transfer capacitances. 0.185(4.7)0.626(15.9)0.063(1.6) 100% single pulse avalanche energy test.0.594(15.1)0.055(1.4)Marking code Mechanical dataG D S Epoxy : UL94-V0 rated flame retardant.

 ..2. Size:772K  wuxi china
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CS2837AND

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS2837 AND General Description VDSS 500 V CS2837 AND, the silicon N-channel Enhanced VDMOSFETs, is ID 20 A PD(TC=25) 230 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.18 conduction loss, improve switching performance and enhance the avalanche energy. The transistor c

Datasheet: CS2232 , CS2308 , CS240 , CS24N40A8 , CS24N50 , CS250 , CS27P06 , CS2807 , IRFP250N , CS2907Z , CS2N50A4 , CS2N60A3H , CS2N60A4H , CS2N60A4T , CS2N60A7H , CS2N60FA9H , CS2N60I .

History: KHB4D5N60F | G30N03D3 | DMU4523D | AM1360NE

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