All MOSFET. CS2N50A4 Datasheet

 

CS2N50A4 Datasheet and Replacement


   Type Designator: CS2N50A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-252
 

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CS2N50A4 Datasheet (PDF)

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CS2N50A4

Silicon N-Channel Power MOSFET R CS2N50 A4 General Description VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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CS2N50A4

CS2N50DF, CS2N50DP, nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N50DD,CS2N50DU500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N50D

Datasheet: CS240 , CS24N40A8 , CS24N50 , CS250 , CS27P06 , CS2807 , CS2837AND , CS2907Z , IRFB4115 , CS2N60A3H , CS2N60A4H , CS2N60A4T , CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY .

History: IRFV260 | TK72E08N1 | IRFI1010NPBF | IRFB3306PBF | 2303 | HY0910U | TK7A60W5

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