CS38N20D Specs and Replacement
Type Designator: CS38N20D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: TO-263
CS38N20D substitution
- MOSFET ⓘ Cross-Reference Search
CS38N20D datasheet
cs38n20d.pdf
CS38N20D N PD TC=25 320 W 2.1 W/ ID VGS=10V,TC=25 44 A ID VGS=10V,TC=100 32 A IDM 180 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.47 /W RthJA 62 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VG... See More ⇒
cs38n30 an.pdf
Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25 ) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
cs38n30an.pdf
Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25 ) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
Detailed specifications: CS334, CS3410B3, CS34P10, CS360, CS36P15, CS3710, CS3710B8, CS37N5, IRFP450, CS38N30AN, CS3912, CS3N50B3HY, CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3
Keywords - CS38N20D MOSFET specs
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CS38N20D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
