CS38N20D Datasheet and Replacement
Type Designator: CS38N20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: TO-263
CS38N20D substitution
CS38N20D Datasheet (PDF)
cs38n20d.pdf
CS38N20D N PD TC=25 320 W 2.1 W/ ID VGS=10V,TC=25 44 A ID VGS=10V,TC=100 32 A IDM 180 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.47 /W RthJA 62 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VG
cs38n30 an.pdf
Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs38n30an.pdf
Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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