All MOSFET. CS47N60 Datasheet

 

CS47N60 Datasheet and Replacement


   Type Designator: CS47N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-254
 

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CS47N60 Datasheet (PDF)

 ..1. Size:124K  china
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CS47N60

CS47N60 N PD TC=25 417 W 3.33 W/ ID VGS=10V,TC=25 47 A IDM 141 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.3 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=30A 0.06 0.07 VGS th VDS=V

Datasheet: CS3N90A4H , CS3N90A8 , CS3N90FA9H , CS3R50A3 , CS3R50FA9 , CS40N06 , CS4482DY , CS4486 , AO3401 , CS48N18 , CS48N75 , CS48N78 , CS48N80 , CS48N88 , CS4905S , CS4J60A3-G , CS4J60B3-G .

History: RU13N65R | GSM4134 | KI30P03DFN | NCE4435

Keywords - CS47N60 MOSFET datasheet

 CS47N60 cross reference
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