CS47N60 Specs and Replacement

Type Designator: CS47N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-254

CS47N60 substitution

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CS47N60 datasheet

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 cs47n60.pdf pdf_icon

CS47N60

CS47N60 N PD TC=25 417 W 3.33 W/ ID VGS=10V,TC=25 47 A IDM 141 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.3 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=30A 0.06 0.07 VGS th VDS=V... See More ⇒

Detailed specifications: CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, P60NF06, CS48N18, CS48N75, CS48N78, CS48N80, CS48N88, CS4905S, CS4J60A3-G, CS4J60B3-G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.