CS4N65A3HDY Datasheet. Specs and Replacement

Type Designator: CS4N65A3HDY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251

  📄📄 Copy 

CS4N65A3HDY substitution

- MOSFET ⓘ Cross-Reference Search

 

CS4N65A3HDY datasheet

 ..1. Size:353K  wuxi china
 cs4n65a3hdy.pdf pdf_icon

CS4N65A3HDY

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 4.1. Size:231K  wuxi china
 cs4n65a3hd.pdf pdf_icon

CS4N65A3HDY

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 4.2. Size:324K  wuxi china
 cs4n65a3hd1-g.pdf pdf_icon

CS4N65A3HDY

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto... See More ⇒

 6.1. Size:220K  wuxi china
 cs4n65a3r.pdf pdf_icon

CS4N65A3HDY

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

SHOW MORE

Detailed specifications: CS4N60A4TDY, CS4N60A7HD, CS4N60A8HD, CS4N60ARRD, CS4N60F, CS4N60FA9HD, CS4N60FA9TDY, CS4N65A3HD, AON6426, CS4N65A3TDY, CS4N65A4HDY, CS4N65A4TDY, CS4N65A8HD, CS4N65F, CS4N70ARHD, CS4N70FA9D, CS50N06

Keywords - CS4N65A3HDY MOSFET specs

 CS4N65A3HDY cross reference

 CS4N65A3HDY equivalent finder

 CS4N65A3HDY pdf lookup

 CS4N65A3HDY substitution

 CS4N65A3HDY replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs