2SK1123
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1123
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 85
nC
trⓘ - Rise Time: 500
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO3P
2SK1123
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1123
Datasheet (PDF)
8.1. Size:454K toshiba
2sk1120.pdf 
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | 4.0 S (typ.) fs = Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1
8.4. Size:259K inchange semiconductor
2sk1120.pdf
isc N-Channel MOSFET Transistor 2SK1120FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
8.5. Size:259K inchange semiconductor
2sk1124.pdf
isc N-Channel MOSFET Transistor 2SK1124FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: 2SK1013-01
, 2SK1017
, 2SK1019
, 2SK105
, 2SK1059
, 2SK1060
, 2SK1109
, 2SK1122
, IRFB4227
, 2SK1132
, 2SK1133
, 2SK1177
, 2SK1178
, 2SK1179
, 2SK1180
, 2SK1181
, 2SK1183
.
