2SK1123 Datasheet. Specs and Replacement
Type Designator: 2SK1123 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 500 nS
Cossⓘ - Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO3P
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2SK1123 substitution
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2SK1123 datasheet
2sk1120.pdf
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y 4.0 S (typ.) fs = Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V = 10 V, I = 1 ... See More ⇒
Detailed specifications: 2SK1013-01, 2SK1017, 2SK1019, 2SK105, 2SK1059, 2SK1060, 2SK1109, 2SK1122, AON6414A, 2SK1132, 2SK1133, 2SK1177, 2SK1178, 2SK1179, 2SK1180, 2SK1181, 2SK1183
Keywords - 2SK1123 MOSFET specs
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