All MOSFET. CS5210PBF Datasheet

 

CS5210PBF Datasheet and Replacement


   Type Designator: CS5210PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-257
 

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CS5210PBF Datasheet (PDF)

 ..1. Size:65K  china
 cs5210pbf.pdf pdf_icon

CS5210PBF

CS5210PbfP PD TC=25 200 W 1.3 W/ ID VGS=-10V,TC=25 -40 AIDM -140 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-24A 0.06 VGS th VDS=VGS,ID=-0.2

 8.1. Size:59K  china
 cs5210.pdf pdf_icon

CS5210PBF

CS5210P PD TC=25 3.8 W 1.3 W/ID VGS=-10V,TC=25 -40 AIDM -140 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-24A 0.06 VGS th VDS=VGS,ID=-0.25mA -

Datasheet: CS4N70ARHD , CS4N70FA9D , CS50N06 , CS50N06D , CS50N80 , CS5103 , CS520 , CS5210 , IRF1404 , CS530 , CS540 , CS540A8 , CS540B8 , CS540N , CS5410 , CS55N10 , CS5630 .

History: CEB16N10L | IXTY1N80P | FK6K02010L | HTA1K2P10 | ELM34417AA | AP50T10GJ-HF | SVS14N65FJD2

Keywords - CS5210PBF MOSFET datasheet

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