All MOSFET. CS5210PBF Datasheet

 

CS5210PBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS5210PBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-257

 CS5210PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS5210PBF Datasheet (PDF)

 ..1. Size:65K  china
 cs5210pbf.pdf

CS5210PBF

CS5210PbfP PD TC=25 200 W 1.3 W/ ID VGS=-10V,TC=25 -40 AIDM -140 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-24A 0.06 VGS th VDS=VGS,ID=-0.2

 8.1. Size:59K  china
 cs5210.pdf

CS5210PBF

CS5210P PD TC=25 3.8 W 1.3 W/ID VGS=-10V,TC=25 -40 AIDM -140 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=-0.25mA -100 VRDS on VGS=-10V,ID=-24A 0.06 VGS th VDS=VGS,ID=-0.25mA -

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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