CS5M5210 Specs and Replacement
Type Designator: CS5M5210
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-257A
CS5M5210 substitution
- MOSFET ⓘ Cross-Reference Search
CS5M5210 datasheet
cs5m5210.pdf
CS5M5210 P PD TC=25 125 W 1.0 W/ ID VGS=-10V,TC=25 -34 A ID VGS=-10V,TC=100 -21 A IDM -136 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W BVDSS VGS=0V,ID=-0.25mA -100 V RDS on VGS=-10V,ID=-24A 0.07 ... See More ⇒
Detailed specifications: CS540A8, CS540B8, CS540N, CS5410, CS55N10, CS5630, CS5M3710, CS5M4905, 2N7000, CS5N50, CS5N5210, CS5N60D, CS5N60F, CS5N65A3, CS5N65A4, CS5N65A7H, CS5N65A8H
Keywords - CS5M5210 MOSFET specs
CS5M5210 cross reference
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